PART |
Description |
Maker |
ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管 1557 nm, LASER DIODE 1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NX7661JB-BC-AZ |
NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) 邻舍1625纳米InGaAsP多量子阱计划生育脉冲激光二极管应用浸时域反射计20毫瓦最小包装)
|
California Eastern Laboratories, Inc.
|
NX7361JB-BC NX7361JB-BC-AZ |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) 邻舍1310纳米计划生育PULSD InGaAsP多量子阱激光二极管应用浸时域反射计50毫瓦最小包装)
|
California Eastern Laboratories, Inc.
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管) GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
DL-4038-021 |
Red Laser Diode High Power AlGaInP Laser Diode
|
SANYO
|